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A Hybrid Active Neutral Point Clamped Inverter Utilizing Si and Ga<sub>2</sub>O<sub>3</sub> Semiconductors: Modelling and Performance Analysis

In this paper, the performance of an active neutral point clamped (ANPC) inverter is evaluated, which is developed utilizing both silicon (Si) and gallium trioxide (Ga<sub>2</sub>O<sub>3</sub>) devices. The hybridization of semiconductor devices is performed since the production volume and fabricati...

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Principais autores: Sheikh Tanzim Meraj, Nor Zaihar Yahaya, Molla Shahadat Hossain Lipu, Jahedul Islam, Law Kah Haw, Kamrul Hasan, Md. Sazal Miah, Shaheer Ansari, Aini Hussain
Formato: Artigo
Idioma:Inglês
Publicado: MDPI AG 2021-11-01
Series:Micromachines
Assuntos:
power electronics
ultrawide bandgap
semiconductors
neutral point clamped
inverter
silicon
Acceso en liña:https://www.mdpi.com/2072-666X/12/12/1466
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