Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique

In this article, an experimental study on the gate-induced drain leakage (GIDL) current repairing worst hot carrier degradation (HCD) in Si p-FinFETs is investigated with the aid of an ultra-fast measurement (UFM) technique (~30 μs). It is found that increasing GIDL bias from 3 V to 4 V achieves a 1...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Hao Chang, Guilei Wang, Hong Yang, Qianqian Liu, Longda Zhou, Zhigang Ji, Ruixi Yu, Zhenhua Wu, Huaxiang Yin, Anyan Du, Junfeng Li, Jun Luo, Chao Zhao, Wenwu Wang
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	MDPI AG 2023-04-01
Sarja:	Nanomaterials
Aiheet:	reliability hot carrier degradation (HCD) Si p-FinFETs gate-induced drain leakage (GIDL) recovery oxide trap generation
Linkit:	https://www.mdpi.com/2079-4991/13/7/1259
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