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Optimized Design in Current, Temperature and Stress Distributions for Paralleled Chips in Press-Pack IGBT Modules

In a press-pack insulated gate bipolar transistor (IGBT), a compact packaging structure forms a strong electromagnetic coupling, thermal coupling, and stress coupling, threatening current sharing, temperature sharing, and stress sharing of paralleled chips. Optimized layouts are proposed based on th...

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Principais autores: Lubin Han, Lin Liang, Yong Kang
Format: Artigo
Sprog:Inglês
Udgivet: China electric power research institute 2025-01-01
Serier:CSEE Journal of Power and Energy Systems
Fag:
Current distribution
layout optimization
press-Pack IGBT
stress distribution
temperature distribution
Online adgang:https://ieeexplore.ieee.org/document/9862575/
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