An Improved Methodology for Switching Losses Estimation in SiC MOSFETs
This work presents an improved analytical model concerning the prediction of switching losses in power MOSFETs by considering the influence of parasitic elements in the high-frequency operation of devices. By using the transistor voltage and current waveforms, it is possible to predict switching...
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| Main Authors: | , , , , |
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| Format: | Artigo |
| Language: | Inglês |
| Published: |
Associação Brasileira de Eletrônica de Potência
2020-09-01
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| Series: | Eletrônica de Potência |
| Subjects: | |
| Online Access: | https://journal.sobraep.org.br/index.php/rep/article/view/312 |
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