Isotropic TFT Characteristics in the {100}-Oriented Grain-Boundary-Free Laser-Crystallized Si Thin Films

Isotropic TFT characteristics are realized in the {100}-oriented grain-boundary-free 60 nm thick Si film obtained by the continuous-wave laser lateral crystallization, where the grain- and sub-boundaries are defined as the crystallographic boundaries having misfit angles of <i>θ</i> > 15° and <i>θ</...

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Bibliografski detalji

Glavni autori:	Nobuo Sasaki, Satoshi Takayama, Rikuto Sasai, Yukiharu Uraoka
Format:	Artigo
Jezik:	Inglês
Izdano:	MDPI AG 2023-01-01
Serija:	Crystals
Teme:	sub-boundary isotropic mobility CW laser crystallization TFT trap-state density
Online pristup:	https://www.mdpi.com/2073-4352/13/1/130
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