Mechanism behind enhanced electrical performance of doped nanostructured tin oxide - surface defect engineering vs dopant electron donation
Tin dioxide (SnO2), with its high optical transmittance and inherent n-type conductivity, is a promising electron transport layer (ETL) material. For application as an ETL material, it is desirable to enhance the charge carrier concentration and mobility of SnO2 to maximise its electron conductivity...
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| Principais autores: | , , , , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Elsevier
2026-07-01
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| Serija: | Next Materials |
| Teme: | |
| Online dostop: | http://www.sciencedirect.com/science/article/pii/S294982282600701X |
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