Mechanism behind enhanced electrical performance of doped nanostructured tin oxide - surface defect engineering vs dopant electron donation

Tin dioxide (SnO2), with its high optical transmittance and inherent n-type conductivity, is a promising electron transport layer (ETL) material. For application as an ETL material, it is desirable to enhance the charge carrier concentration and mobility of SnO2 to maximise its electron conductivity...

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Detalhes bibliográficos

Principais autores:	Abubakar Sadiq Yusuf, Martin Markwitz, Zhan Chen, Maziar Ramezani, John V. Kennedy, Holger Fiedler
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Elsevier 2026-07-01
Colecção:	Next Materials
Assuntos:	Tin oxide Antimony Xenon Implantation Annealing Resistivity
Acesso em linha:	http://www.sciencedirect.com/science/article/pii/S294982282600701X
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