QR-kod

Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth

<p>Abstract</p> <p>Site-controlled InAs nano dots were successfully fabricated by a STMBE system (in situ scanning tunneling microscopy during molecular beam epitaxy growth) at substrate temperatures from 50 to 430&#176;C. After 1.5 ML of the InAs wetting layer (WL) growth by ordinal Stranski&#8211;...

Full beskrivning

Sparad:
Huvudupphov: Toujyou Takashi, Tsukamoto Shiro
Materialtyp: Artigo
Språk:Inglês
Utgiven: SpringerOpen 2010-01-01
Serie:Nanoscale Research Letters
Ämnen:
Quantum dot
Site control
In situ
Scanning tunneling microscopy
Molecular beam epitaxy
Länkar:http://dx.doi.org/10.1007/s11671-010-9802-z
Taggar: Lägg till en tagg
Inga taggar, Lägg till första taggen!

Liknande verk