Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter

In this study, ferroelectric FETs (FeFETs) and CMOS inverters are fabricated and analyzed, exhibiting 13% of 593 devices with sub-60 mV subthreshold swing (SS) at room temperature. Forming gas annealing (FGA) is found to not only enhance ferroelectricity but also significantly improve FeFET electros...

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Detalhes bibliográficos

Principais autores:	Po-Jung Sung, Chun-Jung Su, Shih-Hsuan Lo, Fu-Kuo Hsueh, Darsen D. Lu, Yao-Jen Lee, Tien-Sheng Chao
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IEEE 2020-01-01
coleção:	IEEE Journal of the Electron Devices Society
Assuntos:	FeFET forming gas annealing (FGA) steep slop HfZrO₂ ferroelectric
Acesso em linha:	https://ieeexplore.ieee.org/document/9063644/
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