Epitaxial growth of silicene on ultra-thin Ag(111) films
Epitaxial growth of silicene on atomically flat ultra-thin Ag(111) films was investigated using scanning tunneling microscopy. The Ag films were prepared by low-temperature deposition of Ag on Si substrates, followed by soft annealing at room temperature. Patchy 4 × 4, √13 × √13, √7 × √7, and 2√3 × ...
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| Autori principali: | , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
IOP Publishing
2014-01-01
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| Serie: | New Journal of Physics |
| Soggetti: | |
| Accesso online: | https://doi.org/10.1088/1367-2630/16/9/095004 |
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