Reduced coercive field and enhanced ferroelectric polarization of Hf0.5Zr0.5O2 film through electric-field-assisted rapid annealing
Hafnium oxide–based ferroelectric materials emerged as promising candidates for constructing next-generation high-density memory devices due to their silicon compatibility. However, the high coercive field (Ec, typically exceeding 1.0 MV/cm) puts forward challenges to high operating voltage and limi...
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| Автори: | , , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Elsevier
2025-11-01
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| Серія: | Journal of Materiomics |
| Предмети: | |
| Онлайн доступ: | http://www.sciencedirect.com/science/article/pii/S2352847825000516 |
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