Rear earth doped epitaxial layers of GaAs properties
An analysis has been carried out of the properties of epitaxial GaAs layers obtained from gallium melts doped with rare‑earth elements (REEs). It has been established that each REE corresponds to a certain critical concentration in the melt, above which an inversion of the conductivity type of the e...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Politekhperiodika
2007-04-01
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| Col·lecció: | Технологія та конструювання в електронній апаратурі |
| Matèries: | |
| Accés en línia: | https://tkea.com.ua/index.php/journal/article/view/874 |
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