On the Design of Junction Termination for 4H-SiC High-Voltage Devices

Junction termination design has become a crucial process in ultrahigh-voltage 4H-SiC device design since it enhances the reliability and ensures that the device can reach the designed breakdown voltage. In this work, we review the blocking performances, fabrication considerations and area efficienci...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Zimo Yuan, Anders Hallen, Mietek Bakowski
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	IEEE 2025-01-01
Цуврал:	IEEE Access
Нөхцлүүд:	4H-SiC junction termination sentaurus TCAD surface field
Онлайн хандалт:	https://ieeexplore.ieee.org/document/11096605/
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!