On the Design of Junction Termination for 4H-SiC High-Voltage Devices
Junction termination design has become a crucial process in ultrahigh-voltage 4H-SiC device design since it enhances the reliability and ensures that the device can reach the designed breakdown voltage. In this work, we review the blocking performances, fabrication considerations and area efficienci...
Gorde:
| Egile Nagusiak: | , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
IEEE
2025-01-01
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| Saila: | IEEE Access |
| Gaiak: | |
| Sarrera elektronikoa: | https://ieeexplore.ieee.org/document/11096605/ |
| Etiketak: |
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