The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot
<p>Abstract</p><p>We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection...
I tiakina i:
| Ngā kaituhi matua: | , , , , , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
SpringerOpen
2007-01-01
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| Rangatū: | Nanoscale Research Letters |
| Ngā marau: | |
| Urunga tuihono: | http://dx.doi.org/10.1007/s11671-007-9092-2 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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