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Formation of luminescent defects in 4H-SiC upon ion irradiation and ns laser annealing

Abstract We present a novel approach for the optical activation of the negatively-charged silicon vacancy ( VSi −) center in ion irradiated silicon carbide (SiC) via ns-pulsed laser annealing in the 234–2180 mJ cm− 2 energy density range. The laser annealing process is investigated under 355 nm and...

Deskribapen osoa

Gorde:
Egile Nagusiak: Gabriele Zanelli, Igor Fontan, Greta Andrini, Emilio Corte, Elena Nieto Hernández, Veronica Varzi, Nour-Hanne Amine, Sofia Sturari, Elisa Redolfi, Valentino Rigato, Matteo Campostrini, Paolo Traina, Federico Picollo, Marco Genovese, Sviatoslav Ditalia Tchernij, Jacopo Forneris
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Nature Portfolio 2025-11-01
Saila:Scientific Reports
Gaiak:
Single-photon sources
Ion implantation
Silicon carbide
Silicon vacancy
Photoluminescence
Formation yield
Sarrera elektronikoa:https://doi.org/10.1038/s41598-025-23259-6
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