Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates
The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mis...
I tiakina i:
| Ngā kaituhi matua: | , , , , , , , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
MDPI AG
2022-06-01
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| Rangatū: | Nanomaterials |
| Ngā marau: | |
| Urunga tuihono: | https://www.mdpi.com/2079-4991/12/12/1993 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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