Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width

The capture barrier energy of the E-center deep level defect introduced in Pd/Sb-doped Ge by alpha-particle irradiation has been studied. Palladium Schottky barrier diodes (SBDs) fabricated by resistive evaporation technique were successfully characterised by current-voltage ( I-V ), capacitance-vol...

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Detalhes bibliográficos

Principais autores:	E Omotoso, A T Paradzah, E Igumbor, B A Taleatu, W E Meyer, F D Auret
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IOP Publishing 2020-01-01
coleção:	Materials Research Express
Assuntos:	germanium DLTS capture barrier energy alpha particle irradiation pulse width
Acesso em linha:	https://doi.org/10.1088/2053-1591/ab6c1c
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