On composition, structure and gettering in polycrystalline Si passivating contacts for solar cells by atom probe tomography
Doped polycrystalline Si (poly-Si) contacts with a nanoscale SiOx interlayer have attracted significant interest due to their excellent surface passivation and impurity gettering properties for high-efficiency crystalline Si photovoltaics. However, there remains limited information on their atomic-s...
Gardado en:
| Principais autores: | , , , , , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Elsevier
2025-08-01
|
| Series: | Materials Today Advances |
| Acceso en liña: | http://www.sciencedirect.com/science/article/pii/S2590049825000591 |
| Tags: |
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!
|