On composition, structure and gettering in polycrystalline Si passivating contacts for solar cells by atom probe tomography

Doped polycrystalline Si (poly-Si) contacts with a nanoscale SiOx interlayer have attracted significant interest due to their excellent surface passivation and impurity gettering properties for high-efficiency crystalline Si photovoltaics. However, there remains limited information on their atomic-s...

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Hauptverfasser:	Apurv Yadav, Keita Nomoto, Andrew J. Breen, Di Yan, AnYao Liu, Wenjie Yang, Daniel Macdonald, Simon P. Ringer
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Elsevier 2025-08-01
Schriftenreihe:	Materials Today Advances
Online-Zugang:	http://www.sciencedirect.com/science/article/pii/S2590049825000591
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