Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

An increase of integrated photoluminescence (PL) intensity has been observed in a GaN-based multiple quantum wells (MQWs) sample. The integrated intensity of TDPL spectra forms an anomalous variation: it decreases from 30 to 100 K, then increases abnormally from 100 to 140 K and decreases again when...

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Hlavní autoři:	Yuhao Ben, Feng Liang, Degang Zhao, Xiaowei Wang, Jing Yang, Zongshun Liu, Ping Chen
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2021-04-01
Edice:	Nanomaterials
Témata:	anomalous temperature-dependent photoluminescence non-equilibrium carriers dynamics InGaN/GaN MQWs hydrogen treatment
On-line přístup:	https://www.mdpi.com/2079-4991/11/4/1023
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