Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells

An increase of integrated photoluminescence (PL) intensity has been observed in a GaN-based multiple quantum wells (MQWs) sample. The integrated intensity of TDPL spectra forms an anomalous variation: it decreases from 30 to 100 K, then increases abnormally from 100 to 140 K and decreases again when...

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Ngā kaituhi matua:	Yuhao Ben, Feng Liang, Degang Zhao, Xiaowei Wang, Jing Yang, Zongshun Liu, Ping Chen
Hōputu:	Artigo
Reo:	Inglês
I whakaputaina:	MDPI AG 2021-04-01
Rangatū:	Nanomaterials
Ngā marau:	anomalous temperature-dependent photoluminescence non-equilibrium carriers dynamics InGaN/GaN MQWs hydrogen treatment
Urunga tuihono:	https://www.mdpi.com/2079-4991/11/4/1023
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