MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors
The features of the wide band gap SiC semiconductor use in the capacitive MOSFE sensors’ structure in terms of the hydrogen gas sensitivity effect, the response speed, and the measuring signals’ optimal parameters are studied. Sensors in a high-temperature ceramic housing with the Me/Ta<sub>2</sub>O...
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| Principais autores: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI AG
2023-04-01
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| Series: | Sensors |
| Assuntos: | |
| Acceso en liña: | https://www.mdpi.com/1424-8220/23/7/3760 |
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