Controlled oxygen vacancy electrode reservoir for robust WO3-based memory devices
Abstract Oxide-based memristors are promising candidates as neuromorphic hardware in energy-efficient edge computing applications for the Internet of Things (IoT). However, achieving simultaneously optimized memristive and synaptic performance with low-temperature fabrication, compatible with comple...
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| Asıl Yazarlar: | , , , , , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Nature Portfolio
2026-04-01
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| Seri Bilgileri: | Communications Materials |
| Online Erişim: | https://doi.org/10.1038/s43246-026-01143-8 |
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