Editorial for the special issue on diamond and III-nitride wide bandgap semiconductors

Lignende værker

• Overcoming the impact of post-annealing on uniformity of diamond (100) Schottky barrier diodes through corrosion-resistant nanocarbon ohmic contacts
  af: Sreenath Mylo Valappil, et al.
  Udgivet: (2022-01-01)
• Interfacial Properties of Anisotropic Monolayer SiAs Transistors
  af: Feihu Zou, et al.
  Udgivet: (2024-01-01)
• Overview and Progress Toward High-Efficiency, Air Stable, Cs-Free III-Nitride Photocathode Detectors
  af: Emma Rocco, et al.
  Udgivet: (2022-01-01)
• AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz
  af: Kazuki Nomoto, et al.
  Udgivet: (2025-01-01)
• Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors
  af: Yu Shu, et al.
  Udgivet: (2023-03-01)