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Modeling and Design of FTJs as Multi-Level Low Energy Memristors for Neuromorphic Computing

An in–house modeling framework for Ferroelectric Tunnelling Junctions (FTJ) is here presented in details. After a precise calibration again experiments, the model is exploited for an insightful study of the design of FTJs as synaptic devices for neuromorphic networks. Our analysis explains an...

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Bibliografische gegevens
Hoofdauteurs: Riccardo Fontanini, Mattia Segatto, Marco Massarotto, Ruben Specogna, Francesco Driussi, Mirko Loghi, David Esseni Esseni
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: IEEE 2021-01-01
Reeks:IEEE Journal of the Electron Devices Society
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Online toegang:https://ieeexplore.ieee.org/document/9570809/
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