Modeling and Design of FTJs as Multi-Level Low Energy Memristors for Neuromorphic Computing

An in–house modeling framework for Ferroelectric Tunnelling Junctions (FTJ) is here presented in details. After a precise calibration again experiments, the model is exploited for an insightful study of the design of FTJs as synaptic devices for neuromorphic networks. Our analysis explains an...

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Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Riccardo Fontanini, Mattia Segatto, Marco Massarotto, Ruben Specogna, Francesco Driussi, Mirko Loghi, David Esseni Esseni
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	IEEE 2021-01-01
Цуврал:	IEEE Journal of the Electron Devices Society
Нөхцлүүд:	Ferroelectric tunnelling junctions depolarization field charge trapping tunneling electron resistance neuromorphic computing
Онлайн хандалт:	https://ieeexplore.ieee.org/document/9570809/
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!