Reduction of Oxygen Impurity in Multicrystalline Silicon Production
Effective control of oxygen impurity in multicrystalline silicon is required for the production of a high-quality crystal. The basic principle and some techniques for reducing oxygen impurity in multicrystalline silicon during the unidirectional solidification process are described in this paper. Th...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Wiley
2013-01-01
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| Colecção: | International Journal of Photoenergy |
| Acesso em linha: | http://dx.doi.org/10.1155/2013/908786 |
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