Porous Silicon Carbide for MEMS

Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates. Therefore, Platinum (Pt) was sputter deposited on 4H-SiC substrates and patterned with photolithography and lift off. Etching was performed...

全面介紹

書目詳細資料

Principais autores:	Markus Leitgeb, Christopher Zellner, Georg Pfusterschmied, Michael Schneider, Ulrich Schmid
格式:	Artigo
語言:	Inglês
出版:	MDPI AG 2017-08-01
叢編:	Proceedings
主題:	metal assisted etching Silicon Carbide chemical vapor deposition
在線閱讀:	https://www.mdpi.com/2504-3900/1/4/297
標簽:	添加標簽 沒有標簽, 成為第一個標記此記錄!