Porous Silicon Carbide for MEMS
Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized to generate locally defined porous areas on single crystalline substrates. Therefore, Platinum (Pt) was sputter deposited on 4H-SiC substrates and patterned with photolithography and lift off. Etching was performed...
Сохранить в:
| Главные авторы: | , , , , |
|---|---|
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
MDPI AG
2017-08-01
|
| Серии: | Proceedings |
| Предметы: | |
| Online-ссылка: | https://www.mdpi.com/2504-3900/1/4/297 |
| Метки: |
Нет меток, Требуется 1-ая метка записи!
|