Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs
In this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) under positive gate biases and high temperatures. We reveal an abnormal temperature dependence of threshold voltage instability, suggesting that threshold voltage in...
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| Autors principals: | , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
IEEE
2024-01-01
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| Col·lecció: | IEEE Journal of the Electron Devices Society |
| Matèries: | |
| Accés en línia: | https://ieeexplore.ieee.org/document/10620298/ |
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