Methods and mechanisms of gettering of silicon structures in the production of integrated circuits

Increasing the degree of integration of hardware components imposes more stringent requirements for the reduction of the concentration of contaminants and oxidation stacking faults in the original silicon wafers with its preservation in the IC manufacturing process cycle. This causes high relevance...

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Autores principales:	Pilipenko V. A., Gorushko V. A., Petlitskiy A. N., Ponaryadov V. V., Turtsevich A. S., Shvedov S. V.
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	Politehperiodika 2013-05-01
Colección:	Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Materias:	silicon getter laser rapidly diffusing impurity gettering center dislocation stacking fault
Acceso en línea:	http://www.tkea.com.ua/tkea/2013/2-3_2013/pdf/08.zip
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