Modeling of MoS2/Si heterostructure to study charge transfer dynamics
Here, we synthesized a MoS _2 /Si heterojunction device using a scalable approach involving DC sputtering coupled with sulfurization. The observed current–voltage characteristics unequivocally indicate a rectifying behavior at MoS _2 /Si heterointerface. To quantitatively assess the carrier dynamics...
Salvato in:
| Autori principali: | , , |
|---|---|
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
IOP Publishing
2024-01-01
|
| Serie: | Nano Express |
| Soggetti: | |
| Accesso online: | https://doi.org/10.1088/2632-959X/ad4a96 |
| Tags: |
Nessun Tag, puoi essere il primo ad aggiungerne!!
|