Mueller Matrix Ellipsometric Characterization of Nanoscale Subsurface Damage of 4H-SiC Wafers: From Grinding to CMP

Subsurface damage of 4H-silicon carbide (SiC) wafers, which is detrimental to the performance and lifetime of SiC-based photoelectric devices, is easily induced during surface machining process due to their particular mechanical and physical properties. A nondestructive and effective characterizatio...

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Үндсэн зохиолчид:	Huihui Li, Changcai Cui, Jing Lu, Zhongwei Hu, Wuqing Lin, Subiao Bian, Xipeng Xu
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	Frontiers Media S.A. 2022-02-01
Цуврал:	Frontiers in Physics
Нөхцлүүд:	Mueller matrix spectroscopic ellipsometry subsurface damage silicon carbide (SiC) nondestructive characterization grinding chemical mechanical polishing (CMP)
Онлайн хандалт:	https://www.frontiersin.org/articles/10.3389/fphy.2021.820637/full
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!