Dependence of the defect introduction rate on irradiation dose of p-Si by fast-pile neutrons
It has been studied the high-resistance samples of p-Si (р00 = (3,3 ± 0,5) · 1012 cm-3) and n-Si (n0 = (2,0 ± 0,3) · 1012 cm-3), grown by the floating-zone technique, after irradiation by the fast-pile neutrons at 287 К. The dose and temperature dependences of the effective concentration of carrie...
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| Autors principals: | , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2007-06-01
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| Col·lecció: | Ядерна фізика та енергетика |
| Accés en línia: | http://jnpae.kinr.kiev.ua/20(2)/Articles_PDF/jnpae-2007-2(20)-0089-Dolgolenko.pdf |
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