Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

This paper reports an investigation of the structural, chemical and electrical properties of ultra-thin (5 nm) aluminum nitride (AlN) films grown by plasma enhanced atomic layer deposition (PE-ALD) on gallium nitride (GaN). A uniform and conformal coverage of the GaN substrate was demonstrated by mo...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Emanuela Schilirò, Filippo Giannazzo, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Paweł Prystawko, Piotr Kruszewski, Mike Leszczynski, Ildiko Cora, Béla Pécz, Zsolt Fogarassy, Raffaella Lo Nigro
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	MDPI AG 2021-12-01
Sarja:	Nanomaterials
Aiheet:	AlN GaN atomic layer deposition
Linkit:	https://www.mdpi.com/2079-4991/11/12/3316
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