Effect of Hydrogen Migration in SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacked Gate Insulator of InGaZnO Thin-Film Transistors
In this work, the correlation between SiO<sub>2</sub> deposition thickness and hydrogen content is discussed and the effect of the SiO<sub>2</sub> layer on the properties of synaptic InGaZnO (IGZO) TFTs is analyzed. Three types of IGZO synaptic thin-film transistors (TFTs) were fabricated with diffe...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2022-04-01
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| Col·lecció: | Crystals |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2073-4352/12/5/594 |
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