Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing
ABSTRACT The emerging nitride ferroelectrics, such as Al1‐xScxN promise to significantly advance our current information technology. In particular, two‐terminal memristive devices are ideal candidates for artificial intelligence accelerators and in‐memory computing due to their simplicity in design,...
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| Автори: | , , , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Wiley-VCH
2026-02-01
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| Серія: | Advanced Electronic Materials |
| Предмети: | |
| Онлайн доступ: | https://doi.org/10.1002/aelm.202500616 |
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