Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing
ABSTRACT The emerging nitride ferroelectrics, such as Al1‐xScxN promise to significantly advance our current information technology. In particular, two‐terminal memristive devices are ideal candidates for artificial intelligence accelerators and in‐memory computing due to their simplicity in design,...
Сохранить в:
| Главные авторы: | , , , , , , , , |
|---|---|
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Wiley-VCH
2026-02-01
|
| Серии: | Advanced Electronic Materials |
| Предметы: | |
| Online-ссылка: | https://doi.org/10.1002/aelm.202500616 |
| Метки: |
Нет меток, Требуется 1-ая метка записи!
|