Gallium Nitride Semiconductor Resonant Tunneling Transistor
Abstract Semiconductor devices based on quantum tunneling hold immense promise for developing multi‐valued logic, memory, and oscillators. Recently, two‐terminal gallium nitride (GaN) resonant tunneling diodes (RTDs) have been extensively studied due to their inherent negative differential resistanc...
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| Autors principals: | , , , , , , , , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Wiley
2026-03-01
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| Col·lecció: | Advanced Science |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1002/advs.202516334 |
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