1.3 µm InAs/GaAs Quantum‐Dot Lasers with p‐Type, n‐Type, and Co‐Doped Modulation

Abstract To further enhance the performance and understand the mechanism of InAs quantum dot (QD) laser under high temperature, both theoretically and experimentally it is investigated, the effects of the technique of the combination of direct n‐type doping and modulation p‐type doping, namely co‐do...

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Detalles Bibliográficos

Principais autores:	Huiwen Deng, Jae‐Seong Park, Xuezhe Yu, Zizhuo Liu, Hui Jia, Haotian Zeng, Junjie Yang, Shujie Pan, Siming Chen, Alwyn Seeds, Mingchu Tang, Peter Smowton, Huiyun Liu
Formato:	Artigo
Idioma:	Inglês
Publicado:	Wiley-VCH 2024-10-01
Series:	Advanced Physics Research
Assuntos:	molecular beam epitaxy quantum dots semiconductor lasers semiconductor
Acceso en liña:	https://doi.org/10.1002/apxr.202400045
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