Analytical Estimate of Open-Circuit Voltage of a Schottky-Barrier Solar Cell Under High Level Injection

The open-circuit voltage developed across a Schottky-Barrier (SB) solar cell was theoretically modeled to estimate it under high level injection conditions. An Open-circuit voltage (Voc) of 0.709 V was obtained for specific metal/n-Si SB solar cell. A substantial increase of 42.6 % in Voc was notice...

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Hlavní autoři:	Pramila Mahala, Sanjay Kumar Behura, A. Ray
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Sumy State University 2011-01-01
Edice:	Журнал нано- та електронної фізики
Témata:	Schottky barrier solar cell High level injection Open circuit voltage Ohmic contact Surface recombination velocity.
On-line přístup:	http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_0979-0991.pdf
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