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Gate-Controlled Three-Terminal ZnO Nanoparticle Optoelectronic Synaptic Devices for In-Sensor Neuromorphic Memory Applications

This study reports a gate-tunable three-terminal optoelectronic synaptic device based on an Al/ZnO nanoparticles (NPs)/SiO<sub>2</sub>/Si structure for neuromorphic in-sensor memory applications. The ZnO NP film, fabricated via spin coating, exhibited strong UV-induced excitatory post-synaptic curre...

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Principais autores: Dabin Jeon, Seung Hun Lee, Sung-Nam Lee
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2025-06-01
Serier:Nanomaterials
Fag:
ZnO
nanoparticle
3-terminal
synapse
optoelectronic
neuromorphic
Online adgang:https://www.mdpi.com/2079-4991/15/12/908
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