Area and Bandwidth Enhancement of an n⁺/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology

This paper presents a CMOS-integrated dot avalanche photodiode (dot-APD) that features a small central n⁺/p-well hemispherical cathode/p-well structure circularly surrounded by an anode ring. The dot-APD enables wide hemispherical depletion, charge collection from a large volume, and a sm...

Descrizione completa

Dettagli Bibliografici

Autori principali:	Seyed Saman Kohneh Poushi, Bernhard Goll, Kerstin Schneider-Hornstein, Michael Hofbauer, Horst Zimmermann
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	MDPI AG 2023-03-01
Serie:	Sensors
Soggetti:	CMOS-integrated dot avalanche photodiode multi-dot APD radial charge collection active area enlargement bandwidth enhancement
Accesso online:	https://www.mdpi.com/1424-8220/23/7/3403
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!