Extraction of Preisach model parameters for fluorite-structure ferroelectrics and antiferroelectrics

Abstract Flourite-structure ferroelectrics (FEs) and antiferroelectrics (AFEs) such as HfO2 and its variants have gained copious attention from the semiconductor community, because they enable complementary metal-oxide-semiconductor (CMOS)-compatible platforms for high-density, high-performance non-...

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Bibliografische Detailangaben

Hauptverfasser:	Zheng Wang, Jae Hur, Nujhat Tasneem, Winston Chern, Shimeng Yu, Asif Khan
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	Nature Portfolio 2021-06-01
Schriftenreihe:	Scientific Reports
Online-Zugang:	https://doi.org/10.1038/s41598-021-91492-w
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