Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a non-intentionally doped GaN channel layer, enabling the prevention of punch-through effects and related drain leakage current un...

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Bibliografski detalji

Glavni autori:	Kathia Harrouche, Srisaran Venkatachalam, Lyes Ben-Hammou, François Grandpierron, Etienne Okada, Farid Medjdoub
Format:	Artigo
Jezik:	Inglês
Izdano:	MDPI AG 2023-01-01
Serija:	Micromachines
Teme:	GaN HEMT AlGaN back barrier DIBL load-pull PAE
Online pristup:	https://www.mdpi.com/2072-666X/14/2/291
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