Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier
In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a non-intentionally doped GaN channel layer, enabling the prevention of punch-through effects and related drain leakage current un...
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| Автори: | , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
MDPI AG
2023-01-01
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| Серія: | Micromachines |
| Предмети: | |
| Онлайн доступ: | https://www.mdpi.com/2072-666X/14/2/291 |
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