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A split gate double-channel asymmetric SiC trench MOSFET for improved gate oxide reliability and dynamic characteristics

Abstract A split-gate double-channel asymmetric SiC trench MOSFET (SGDC-ATMOS) is proposed in this work. Besides a P+ shielded region covering the bottom of the trench, a charge balance effect caused by the split gate further reduces the maximum gate oxide electric field (E mox) around the trench, w...

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Principais autores: Feng Xu, Yonghao Dong, Fa Li, Fei Xie, Pengfei Guo, Yuxue Zhou, Yongfeng Liu, Xiangdong Meng, Rongxing Cao, Yuxiong Xue
Format: Artigo
Sprog:Inglês
Udgivet: Nature Portfolio 2025-11-01
Serier:Scientific Reports
Fag:
Trench MOSFET
Split gate
Double channel
Gate oxide
Dynamic characteristics
Online adgang:https://doi.org/10.1038/s41598-025-27655-w
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