High-Performance Ultraviolet Photodetectors Based on Nanoporous GaN with a Ga₂O₃ Single-Crystal Layer

The utilization of a nanoporous (NP) GaN fabricated by electrochemical etching has been demonstrated to be effective in the fabrication of a high-performance ultraviolet (UV) photodetector (PD). However, the NP-GaN PD typically exhibits a low light-dark current ratio and slow light response speed. I...

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Autori principali:	Junjie Wen, Yuankang Wang, Biao Zhang, Rongrong Chen, Hongyan Zhu, Xinyu Han, Hongdi Xiao
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	MDPI AG 2024-07-01
Serie:	Nanomaterials
Soggetti:	nanoporous GaN UV photodetector DBR Ga<sub>2</sub>O<sub>3</sub>
Accesso online:	https://www.mdpi.com/2079-4991/14/13/1165
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