High‐Power GaN‐Based Blue Laser Diodes Degradation Investigation and Anti‐aging Solution

Gallium nitride (GaN)‐based semiconductor laser diodes (LDs) have garnered significant attention due to their promising applications. However, high‐power LDs face serious degradation issues that limit their practical use. This study investigates the degradation factors of 437 nm and 6.3 W LDs by com...

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Autores principales:	Enming Zhang, Yue Zeng, Wenyu Kang, Zhibai Zhong, Yushou Wang, Tongwei Yan, Shaohua Huang, Zhongying Zhang, Kechuang Lin, Junyong Kang
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	Wiley-VCH 2024-11-01
Colección:	Advanced Photonics Research
Materias:	III‐V semiconductors facet passivation impurity diffusion PICS3D SIMS
Acceso en línea:	https://doi.org/10.1002/adpr.202400119
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